Publications
A1. –« InP nanowires with InAs insertion grown by catalyst assisted molecular beam epitaxy on Si substrate»
H. Khmissi, K. Naji, M. H. Haj Alouane, N. Chauvin, C. Bru-Chevallier, B. Ilahi, G. Patriarche and M. Gendry Journal of Applied Physics (submitted)
A2. –« InP/InAs/InP core-shell nanowires emitting in telecommunication wavelength on Si substrate
M. H. Hadj Alouane, N. Chauvin, H. Khmissi, K. Naji , B. Ilahi, H. Maaref, G. Patriarche, M. Gendry, and C. Bru-Chevallier Nanotechnology(submitted)
A3. –«InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: Electronic energy levels and carrier’s dynamic »
M. H. Hadj Alouane, B. Ilahi, L. Sfaxi and H. Maaref, Journal of Nanoparticle Research (Accepted for publication)
A4. –«Temperature dependent photoluminescence properties of InAs/InP quantum sticks subjected to low energy phosphorous ion implantation and subsequent annealing»
M. H. Hadj Alouane, B. Ilahi, H. Maaref, B. Salem, V. Aimez, D. Morris and M. Gendry Journal of Nanoscience and Nanotechnology (accepted for publication)
A5. –«Impact of ion-implantation-induced band gap engineering on the temperature dependent photoluminescence properties of InAs/InP quantum dashes»
M. H. Hadj Alouane, B. Ilahi, H. Maaref, B. Salem, V. Aimez, D. Morris, A. Turala, P. Regreny and M. Gendry Journal of Applied Physics 108, 024317 (2010)
A6. –«Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots»
Z. Zaâboub, B. Ilahi,, B. Salem, V. Aimez, D. Morris L. Sfaxi, and H. Maaref, Journal of Applied Physics 107, 124306 (2010)
A7. –« Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing»
B. Ilahi, Z. Zaâboub, B. Salem, D. Morris, V. Aimez, L. Sfaxi, and H. Maaref Materials Science in Semiconductor Processing 12 (1-2), pp. 71-74 (2009)
A8. –«Inhomogeneous broadening and alloy intermixing in low proton doses implanted InAs/GaAs self-assembled quantum dots»
Z. Zaâboub, B. Ilahi, L. Sfaxi, H. Maaref, B. Salem, V. Aimez, and D. Morris Nanotechnology 19, 285715 (2008)
A9. -«Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots’ intermixing»
Z. Zaâboub, B. Ilahi, L. Sfaxi, H. Maaref, B. Salem, V. Aimez, and D. Morris Physics Letters A 372, 4714–4717 (2008)
A10. -«Thermal-induced intermixing effects on the optical properties of long wavelength low density InAs/GaAs quantum dots»
Z. Zaâboub, B. Ilahi, L. Sfaxi, H. Maaref, Material Sciences and Engineering C 28, 1002 (2008)
A11. -«Optical investigation of InGaAs capped InAs quantum dots: impact of the strain driven phase separation and dependence upon post growth thermal treatment»
B. Ilahi, L. Sfaxi, H. Maaref, Journal of Luminescence 127 (2) pp 741-746 (2007)
A12. -«Optical characterisation of single InAs quantum dots on GaAs substrate emitting at 1.3μm»
N. Chauvin, M. Baira, C. Bru-Chevallier, B. Ilahi, L. Sfaxi and H. Maaref Physica Status Solidi (c) 3, 3672 (2006)
A13. -«Post growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing»
B. Ilahi, B. Salem, V. Aimez, L. Sfaxi, H. Maaref and D. Morris Nanotechnology 17, 15, 3707 (2006)
A14. -« Toward long wavelength low density InAs/GaAs quantum dots»
B. Ilahi, L. Sfaxi, E. Tranvouez, G. Brémond, M. Baïra, C. Bru-Chevalier and H. Maaref, Physics Letters A 357, 4-5, 360 (2006)
A15. -«Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing »
B. Ilahi, L. Sfaxi, G. Brémond and H. Maaref Material Sciences and Engineering (c) 26, 971 (2006)
A16. -«Thermal annealing effect on vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness »
B. Ilahi, L. Sfaxi, G. Bremond, M. Hjiri and H. Maaref Physica Status Solidi (c) 2, 1325 (2005)
A17. -« Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots»
B. Ilahi, L. Sfaxi, F. Hassen, B. Salem, G. Bremond, O. Marty, L. Bouzaiene and H. Maaref, Material Sciences and Engineering (c) 26, 2-3, 374 (2006)
A18. -« Optical properties of 1.3 µm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As /GaAs hetero-capping layer »
B. Ilahi, L. Sfaxi, F. Hassen, H. Maaref, B. Salem, G. Guillot, A. Jbeli and X. Marie
Applied Physics A 80 813 (2005)
A19. -«Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs (001) quantum dots»
B. Ilahi, L. Sfaxi, G. Bremond, M. Senes, X. Marie and H. Maaref, Eur. Phys. J. Appl. Phys. 30, 101 (2005)
A20. -«Long wavelength vertically stacked InAs/GaAs(001) quantum dots with a bimodal size distribution: Optical properties and electronic coupling»
B. Ilahi, L. Sfaxi, H. Maaref, G. Bremond, G. Guillot, Superlattices and Microstructures, 36, 55, (2004)
A21. -«Electronic coupling effect on carrier dynamics in InAs/GaAs vertically stacked QD layers»
M. Hjiri, L. Sfaxi, F. Hassen, B. Ilahi, , H. Maaref, M. Senes, X. Marie, T. Amand, , Superlattices and Microstructures, 36, 39, (2004)
A22. -« Tuning vertically stacked InAs/GaAs quantum dots properties under spacer thickness effects for 1.3 µm emission »
L. Bouzaïene, B. Ilahi, L. Sfaxi, F. Hassen, H. Maaref, O. Marty and J. Dazord Applied Physics A, 79, 587 (2004)
A23. -«Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs QD supperlattices»
B. Ilahi, L. Sfaxi, F. Hassen, L. Bouzaîene, H. Maaref, B. Salem, G. Bremond and O. Marty Physica Status Solidi (a) 199, 3, 457 (2003)
A24. -« In segregation and reevaporation effects on the photoluminescence properties of highly strained, InxGa1-xAs/GaAs quantum wells»
B. Ilahi, L. Sfaxi, L. Bouzaîene, F. Hassen and H. Maaref, Physica E 17, 232 (2003)
