Publications
1. K. P. Biju and M. K. Jain, “Sol-gel derived TiO2 : ZrO2 multilayer thin films for humidity sensing application” Sensors and Actuators B, Chem. 128 (2008) 407-413.
2. K. P. Biju and M. K. Jain, “Effect of crystallization on humidity sensing properties of sol-gel derived nanocrystalline TiO2 thin films”, Thin Solid Films 516 (2008) 2175-2180.
3. K. P. Biju and M. K. Jain, “Effect of polyethylene glycol additive in sol on the humidity sensing properties of a TiO2 thin film”, Meas. Sci. Technol. 18 (2007) 2991–2996.
4. K. P. Biju, A. Subrahmanyam and M. K. Jain, “Growth of InN thin films by modified activated reactive evaporation”, J. Phys. D: Appl. Phys. 41 (2008) 155409.
5. K. P. Biju and M. K. Jain, “The effect of rf power on the growth of InN films by modified activated reactive evaporation”, Applied Surface Science 254 (2008) 7259 - 7265.
6. K. P. Biju, A. Subrahmanyam and M. K. Jain, “Growth of InN nanocrystalline films by activated reactive evaporation” Journal of Nanoscience and Nanotechnology 9 (2009) 5208 - 5213.
7. K. P. Biju and M. K. Jain, “Annealing studies of InN films grown by modified activated reactive evaporation”, Journal of Crystal Growth 311 (2009) 2542 - 2548.
8. K. P. Biju, A. Subrahmanyam and M. K. Jain, “Low temperature growth of GaN thin films by modified activated reactive evaporation”, Journal of Crystal Growth 311 (2009) 2275 - 2280.
9. S. R. Meher, K.P. Biju, M. K. Jain. “Effect of post-annealing on the band gap of sol–gel prepared nano-crystalline Mgx Zn1−x O (0.0 ≤ x ≤ 0.3) thin films” Journal of Sol-Gel Science and Technology 52 (2009) 228-234.
10. S. R. Meher, K. P. Biju and M. K. Jain “Room temperature growth of nano-crystalline InN films on flexible substrates by modified activated reactive evaporation”, AIP Conference Proceedings, CP 1147, 457 (2009).
11. S. R. Meher, K. P. Biju and M. K. Jain “Growth of indium rich nano-crystalline indium gallium nitride thin films by modified activated reactive evaporation”, Int. J. Nanoscience, 10, 141, 2011.
12. K. P. Biju, S. R. Meher, M. K. Jain “Role of charged species on the growth of GaN films by modified activated reactive evaporation” Electrochemical and Solid State Letters 14 H46-49, 2011.
13. K. P. Biju, X. J. Liu, E. M. Bourim, I. Kim, S. Jung, J. B. Park,and H. Hwang “Improved Resistive Switching Properties of Solution Processed TiO2 Thin Films” Electrochemical and Solid State Letters 13 (2010) H443-H446.
14. K. P. Biju, X. J. Liu, E. M. Bourim, I. Kim, S. Jung, M. Siddik, J. Y. Lee, H. Hwang “Asymmetric bipolar resistive switching in solution- processed Pt/TiO2/W devices” Journal of Physics D: Applied Physics 43 (2010) 495104
15. X. J. Liu, K. P. Biju, E. M. Bourim, S. Park, W. Lee, J. Shin, H. Hwang “ Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices” Solid State Communication 150 (2010) 2231-2235.
16. X. J. Liu, K. P. Biju, E. M. Bourim, S. Park, W. Lee, D. Lee, K. Seo, H. Hwang “Filament-type resistive switching in homogenous bi-layer Pr0.7Ca0.3MnO3 thin film memory devices” Electrochemical and Solid state Letters 14, H9-H12, 2010
17. S. R. Meher, K. P. Biju and M. K. Jain “Room temperature growth of InxGa1-xN thin films by mixed source modified activated reactive evaporation” , Appl. Surf. Sc. 257, 8623, 2011.
18. K. P. Biju, X. J. Liu, S. Kim, M. Siddik, J. Shin, J. Y. Lee and H. Hwang “Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices” Current Applied Physics 11, e62, 2011.
19. K. P. Biju, X. J. Liu, S. H. Kim, S. J. Jung, J. Park and H. Hwang “Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films Physica Status of Solidi: Rapid Research Letters 5, No. 3, 89-91 (2011).
20. X. J. Liu, K. P. Biju, S. Park, I. Kim, M. Siddik, S. Sadaf, H. Hwang “Improved resistive switching properties in Pt/Pr0.7Ca0.3MnO3/Y2O3-stabilized ZrO2/W via-hole structures” Current Applied Physics 11, e58, 2011.
21. Seonghyun Kim, K. P. Biju, Minseok Jo, Seungjae Jung, Jubong Park, Joonmyoung Lee,Wootae Lee, Jungho Shin, Sangsu Park, and Hyunsang Hwang, “Effect of Scaling WOx-based RRAMs on their Resistive Switching Characteristics” IEEE Electron Device Letters 32, 671, 2011.
22. Jungho Shin, Insung Kim, K. P. Biju, Minseok Jo, Jubong Park, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, and Hyunsang Hwang “TiO2-based MIM selection device for bipolar RRAM cross-point application” J. Applied Physics 109 1 (2011).
23. K. P. Biju, XinJun Liu, Jungho Shin, Insung Kim, Seungjae Jung, Manzar Siddik, Joonmyoung Lee, Hyunsang Hwang “ Highly asymmetric bipolar resistive switching in solution- processed Pt/TiO2/W devices for cross point application” Current Applied Physics (Accepted)
24. El Mostafa Bourim, Sangsoo Park, Xinjun Liu, K. P. Biju, H. Hwang and Alex Ignatiev “Ferroelectric Polarization Effect on Al-Nb codoped Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 Heterostructure Resistive Memory” Electrochemical and Solid State Letters 14, H225, 2011.
25. Xinjun Liu, K. P. Biju, Jubong Park, Sangsu Park, Jungho Shin, Insung Kim, Sharif Sadaf, Hyunsang Hwang ’ Low Power and Controllable Memory Window in Pt/Pr0.7Ca0.3MnO3/Yttria-stabilized Zirconia/W RRAM devices” J. Nanoscience and Nanotechnology (Accepted)
26. Jubong Park, K. P. Biju, Seungjae Jung, Wootae Lee, Joonmyoung Lee, Seonghyun Kim, Sangsoo Park, Jungho Shin, and Hyunsang Hwang “Multi-bit operation of TiOx –based ReRAM by Schottky Barrier Height Engineering” IEEE Electron Device Letters 32, 476, 2011.
27. Insung Kim, Seungjae Jung, Jungho Shin, K.P. Biju , kyungah Seo, X.J. Liu, Manzar siddik, Jaemin kong, KwnagheeLee, and Hyunsang Hwang “Improved Switching Uniformity of a bilayer TiO2 films” Jpn. J. Appl. Physics 50, 046504 , 2011.
28. Joonmyoung Lee, Jungho Shin, Daeseok Lee, Wootae Lee, Seungjae Jung, Minseok Jo ,Jubong Park, K. P. Biju, Seonghyun Kim, Sangsu Park and Hyunsang Hwang , “Diode-less Nano-scale ZrOx/HfOx RRAM Device with Excellent Switching Uniformity and Reliability for High-density Cross-point Memory Applications” Tech. Dig. – Int. Electron Devices Meet. 2010 452 (IEDM)
29. K. P. Biju, X. J. Liu, Seonghyun Kim, Jungho Shin, Kim Insung, Manzar Siddik, Alex Ignatiev, Hyunsang Hwang “Thickness dependent resistive switching characteristics of WOx thin films” J. Appl. Phys. 110,064505, 2011
30. S. R. Meher, R. V. Muniswami Naidu, K. P. Biju, A. Subrahmanyam, and Mahaveer K. Jain, “Carrier transport in InxGa1−xN thin films grown by modified activated reactive evaporation” Appl. Phys. Lett. 99, 082112 (2011)
31. Insung Kim, Manzar Siddik, Jungho Shin, K. P. Biju, Seungjae Jung, and Hyunsang Hwang “Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device” Appl. Phys. Lett. 99, 042101 (2011).
32. Kyungah Seo, Insung Kim, Seungjae Jung, Minseok Jo, Sangsu Park, Jubong Park, Jungho Shin, K. P. Biju, Jaemin Kong, Kwanghee Lee, Byounghun Lee and Hyunsang Hwang “Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device” Nanotechnology 22, 254023, 2011.
33. Xinjun Liu, K. P. Biju, Joonmyoung Lee, Jubong Park, Seonghyun Kim, Sangsu Park, Jungho Shin, Sharif Md. Sadaf, and Hyunsang Hwang “Parallel memristive filaments model applicable to bipolar and filamentary resistive switching” Appl. Phys. Lett. 99, 113518 (2011).
34. S. R. Meher, K. P. Biju, M. K. Jain “Raman spectroscopic investigation of phase separation and compositional fluctuations in nanocrystalline InxGa1−xN thin films prepared by modified activated reactive evaporation” Physica Status Solidi A ( accepted).
