Publications
1. Z. P. Zhou, S. J. Luo, Y. Wang, Z. W Ai, C. Liu, D. F. Wang, Y.P. Lee, Room temperature ferromagnetism and hopping transport in amorphous CrN thin films, Thin Solid Films 519, 1989 (2011).
2. K. M. Wu, T. Han, K. Shen, B. Liu, T. Peng, Y. Pan, H. D. Sun, and C. Liu, Growth of vertically aligned InGaN nanorod arrays on p-Type Si substrates for heterojunction diodes, J. Nanosci. Nanotechnol. 10, 8139 (2010).
3. Y. Pan, T. Wang, K. Shen, T. Peng, K. M. Wu, W. Y. Zhang, C. Liu, Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In, J. Cryst. Growth 313, 16 (2010).
4. T. Peng, K. Shen, H. Wu, C. Hu, and C Liu*, Room-temperature ferromagnetism and electrical properties of Cu2O/GaN heterostructures, J. Phys. D: Appl. Phys. 43, 315101 (2010).
5. Q. M. Fu, T. Peng, Y. Pan and C. Liu, Effects of AlN/GaN superlattices on structural properties of Al0.45Ga0.55N grown on AlN/sapphire templates, J. Kor. Phys. Soc. 55, 2659 (2009).
6. H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, K. Shen, B. R. Zhao, C. Liu*, Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructure, J. Phys. D - Appl. Phys. 18, 185302 (2009).
7. Yuan, Longyan, Fang, Guojia, Zhou, Hai, Gao, Yihua, Liu, Chang, Zhao, Xingzhong，Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing，J. Phys. D – Appl. Phys., 42, 145302 (2009).
8. Q. M. Fu, T. Peng, C. Liu, Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy, J. Cryst. Growth, 311, 3553 (2009).
9. B. Liu, J. Gao, K. M. Wu and C. Liu，Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy, Solid State Commun. 149, 715 (2009).
10. Y. Tian, H. B. Lu, L. Liao, J. C. Li, C. Liu, Synthesis and evolution of hollow ZnO microspheres assisted by Zn powder precursor, Solid State Commun. 149, 456 (2009).
11. H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, and C. Liu, Temperature- and field-dependent leakage current of epitaxial YMnO3/GaN heterostructure，Appl. Phys. Lett. 94, 122904 (2009).
12. D. F. Wang, S. Y. Park, Y. S. Lee, T. W. Eom, S. J. Lee,Y. P. Lee, Ch. J. Choi, J. C. Li, and C. Liu, Epitaxial ZnMnO/ZnO Coaxial Nanocable, Crystal Growth & Design 9, 2124 (2009).
13. K. M. Wu, Y. Pan, and C. Liu, InGaN nanorod arrays grown by molecular beam epitaxy: growth mechanism, structural and optical properties, Appl. Surf. Sci. 255, 6705 (2009).
14. Q. M. Fu, T. Peng, F. Mei, Y. Pan, L. Liao and C. Liu，Relaxation of compressive strain by inclined threading dislocations in Al0.45Ga0.55N grown on AlN/sapphire templates using graded-AlxGa1-xN/AlN superlattices，J. Phys. D - Appl. Phys. 42, 035311 (2009).
15. H. Li, J. P. Sang, C. Liu, H. B. Lu, J. C. Cao, Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate, Central European J Phys. 6, 638 (2008).
16. F. Mei, K. M. Wu, Y. Pan, T. Han, and C. Liu, J. W. Gerlach, and B. Rauschenbach, Structural and optical properties of Cr-doped semi-insulating GaN epilayers, Appl. Phys. Lett. 93, 113507 (2008).
17. L. Liao, Z. Zheng, B. Yan, J. X. Zhang, H. Gong, J. C. Li, C. Liu, Z. X. Shen, and T. Yu, Morphology controllable synthesis of alpha-Fe2O3 1D nanostructures: Growth mechanism and nanodevice based on single nanowire, J. Phys. Chem. C 112, 10784 (2008).
18. L. Liao, H. X. Mai, Q. Yuan, H. B. Lu, J. C. Li, C. Liu, C. H. Yan, Z. X. Shen, T. Yu, Ting, Single CeO2 nanowire gas sensor supported with Pt nanocrystals: Gas sensitivity, surface bond states and chemical mechanism, J. Phys. Chem. C 112, 9061 (2008). Highlighted by Nature Asia Materials 06 August 2008.
19. F. Mei, Q. M. Fu, T. Peng, C. Liu, M. Z. Peng and J. M. Zhou, Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy, J. Appl. Phys. 103, 094502 (2008).
20. F. Ren, G. X. Cai, X. H. Xiao, L. X. Fan, C. Liu, D. J. Fu, J. B. Wang, and C. Z. Jiang, Ion irradiation induced hollow and sandwiched nanoparticles, J Appl. Phys. 103, 084308 (2008).
21. L. Liao, H. B. Lu, M. Shuai, J. C. Li, Y. L. Liu, C. Liu, Z. X. Shen, and T Yu, A novel gas sensor based on field ionization from ZnO nanowires: moderate working voltage and high stability, Nanotechnol. 19, 175501 (2008).
22. D. F. Wang, S. Y. Park, Y. S. Lee, Y. P. Lee, J. C. Li, and C. Liu，Synthesis and room-temperature ferromagnetism of Zn0.96Mn0.04O/ZnO coaxial nanocable and Zn0.96Mn0.04O film，J. Appl. Phys. 103, 07D126 (2008).
23. B. Liu, Q. M. Fu, K. M. Wu, C. Liu, Studies of the growth method and properties of AlN grown by RF-MBE, J. Kor. Phys. Soc. 52，S17 (2008).
24. L. Zhang, F. Q. Liu, and C. Liu, Simulations of voltage-controlled yellow or orange emmision from GaN codoed with Eu and Er, J. Kor. Phys. Soc. 52，S67 (2008).
25. J. Gao, B. Liu, Y. Pan, T. Peng, K. M. Wu, C. Liu, Effect of rapid thermal annealing on the properties of InN epilayers, J. Kor. Phys. Soc. 52，S128 (2008).
26. T. Peng, Q. M. Fu and C. Liu, Deposition of ZnO thin films on GaN substrates, J. Kor. Phys. Soc. 52，S100 (2008).
27. X. H. Xiao, J. X. Xu, F. Ren, C. Liu, C. Z. Jiang, Fabrication of Ag nanoclusters in single-crystal MgO by high-energy ion implantation, Physica E 40, 705 (2008).
28. L. Han, F. Mei, C. Liu, C. Pedro and E. Alves, Comparison of ZnO thin films grown by pulsed laser deposition on sapphire and Si substrates, Physica E, 40, 699 (2008).
29. L. Liao, H. B. Lu, L. Zhang, M. Shuai, J. C. Li, C. Liu, D. J. Fu, and F. Ren，Effect of ferromagnetic properties in Al-doped Zn1-xCoxO nanowires synthesized by water-assistance reactive vapor deposition, J. Appl. Phys. 102, 114307 (2007).
30. X. H. Xiao, L. P. Guo, F. Ren, J. B. Wang, D. J. Fu, D. L. Chen, Z. Y. Wu, Q. J. Jia, C. Liu, C. Z. Jiang, Formation of metal nanoparticles in silica by the sequential implantation of Ag and Cu, Appl. Phys. A 89, 681 (2007).
31. L. Liao, H. B. Lu, J. C. Li, C. Liu, D. J. Fu, and Y. L. Liu, The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation, Appl. Phys. Lett., 91, 173110 (2007), selected for the November 5, 2007 issue of Virtual Journal of Nanoscale Science & Technology.
32. L. Zhang, F. Q. Liu, and C. Liu, Voltage-controlled variable light emissions from GaN codoped with Eu, Er, and Tm, Appl. Phys. Lett. 91, 143514 (2007).
33. X. H. Xiao, F. Ren, J. B. Wang, C. Liu, C. Z. Jiang, Formation of aligned silver nanoparticles by ion implantation, Mater. Lett. 61, 4435 (2007).
34. X. H. Xiao, J. Zhu, Y. R. Li, W. B. Luo, B. F. Yu, L. X. Fan, F. Ren, C. Liu, and C Z Jiang, Greatly reduced leakage current in BiFeO3 thin film by oxygen ion implantation, J. Phys. D - Appl. Phys. 40, 5775 (2007).
35. L. Liao, K. H. Liu, W. L. Wang, X. D. Bai, E. G. Wang, Y. L. Liu, J. C. Li, and C. Liu, Multiwall Boron Carbonitride/Carbon Nanotube Junction and Its Rectification Behavior, J. Am. Chem. Soc. 129, 9562 (2007).
36. H. Li, J. P. Sang, F. Mei, F. Ren, L. Zhang, C. Liu, Observation of ferromagnetism at room temperature for Cr+ ions implanted ZnO thin films. Appl. Surf. Sci. 253, 8524 (2007).
37. L. Zhang, F. Q. Liu, C. Liu, The influence of external electromagnetic field on an exciton spin current, J. Phys. Condens. Matter 19, 346222 (2007).
38. L. Zhang, H. C. Jiang, C. Liu, J. W. Dong, P. Chow, Annealing of Al2O3 thin films prepared by atomic layer deposition, J. Phys. D - Appl. Phys. 40, 3707 (2007).
39. L. Liao, W. F. Zhang, H. B. Lu, J. C. Li, D. F. Wang, C. Liu, D. J. Fu, Investigation of the temperature dependence of the field emission of ZnO nanorods, Nanotechnol. 18, 225703 (2007).
40. L. Liao, Z. Xu, K. H. Liu, W. L. Wang, S. Liu, X. D. Bai, E. G. Wang, J. C. Li and C. Liu, Large-scale aligned silicon carbonitride nanotube arrays: Synthesis, characterization, and field emission property, J. Appl. Phys. 101 114306 (2007), selected for the June 18, 2007 issue of Virtual Journal of Nanoscale Science & Technology.
41. L. Liao, J. C. Li, C. Liu, Z. Xu, W. L. Wang, S. Liu, X. D. Bai, E. G. Wang, Field emission of GaN-filled carbon nanotubes: High and stable emission current, J. Nanosci. Nanotechnol. 7, 1080 (2007).
42. L. Liao, H. B. Lu, J. C. Li, H. He, D. F. Wang, D. J. Fu, C. Liu, W. F. Zhang, Size dependence of gas sensitivity of ZnO nanorods, J. Phys. Chem C 111, 1900 (2007).
43. F. Ren, C. Z. Jiang, C. Liu, J. B. Wang, T. Oku, Controlling the morphology of Ag nanoclusters by ion implantation to different doses and subsequent annealing, Phys. Rev. Lett. 97, 165501 (2006).
44. F. Mei, C. Liu, L. Zhang, F. Ren, L. Zhou, W. K. Zhao, Y. L. Fang, Microstructural study of binary TiO2:SiO2 nanocrystalline thin film, J. Cryst. Growth 292, 87 (2006).
45. X. Z. Shang, S. D. Wu, C. Liu, W. X. Wang, L.W. Guo,Q. Huang and J. M. Zhou, Low temperature step-graded InAlAs/GaAs metamorphic buffer grown by molecular beam epitaxy, J. Phys. D: Appl. Phys. 39, 1800 (2006).
46. F. Mei, C. Liu, L. Zhou, W. K. Zhao, Y. L. Fang, J. B. Wang, and Y. Y. Ren, Effect of annealing temperature on binary TiO2:SiO2 nanocrystalline thin films, J. Kor. Phys. Soc. 48, 1509 (2006).
47. F. Ren, C. Z. Jiang, C. Liu, J. B. Wang, Fabrication and annihilation of nanovoids in Cu nanoclusters by ion implantation into silica and subsequent annealing, Appl. Phys. Lett. 88, 183114 (2006).
48. L. Chen, Z. Q. Chen, X. Z. Shang, C. Liu, S. Xu, Q. Fu, Effect of annealing temperature on density of ZnO quantum dots, Solid State Commun. 137, 561 (2006).
49. L. Liao, J. C. Li, D. F. Wang, C. Liu, M. Z. Peng, J. M. Zhou, Size dependence of Curie temperature in Co+ ion implanted ZnO nanowires, Nanotechnol. 17, 830 (2006).
50. L. Liao, J. C. Li, D. F. Wang , C. Liu, C. S. Liu, Q. Fu, Electron field emission studies on ZnO nanowires, Mater. Lett. 59, 2465 (2005).
51. F. Ren, C. Z. Jiang, C. Liu, D. J. Fu, Y. Shi, Interface influence on the surface plasmon resonance of Ag nanocluster composite, Solid State Commun. 135, 268 (2005).
52. L. Liao, J. C. Li, D. F. Wang , C. Liu, C. S. Liu, Q. Fu, L. X. Fan, Field emission property improvement of ZnO nanowires coated with amorphous carbon and carbon nitride films, Nanotechnol. 16, 985 (2005).
53. C. Liu, Q. Fu, J.B. Wang, W.K. Zhao, Y.L. Fang, T. Mihara, M. Kiuchi, Structural characterization of nanocrystalline TiO2:SiO2 powders and thin film at 35 °C, J. Kor. Phys. Soc. 46, S104 (2005).
54. F. Ren，C. Z. Jiang, C. Liu, Y. Shi, J. B. Wang，Alloy and core-shell nanoclusters formed by sequential ion implantation and thermal annealing, J. Kor. Phys. Soc. 46, S43 (2005).
55. L. Liao, J. C. Li, D. H. Liu, C. Liu, D. F. Wang , W. Z .Song, Q. Fu, Self-assembly of aligned ZnO nanoscrews: Synthesis, growth, configuration and field emission, Appl. Phys. Lett. 86, 083106 (2005) (Cover image).
56. L. Liao, D. H. Liu, J. C. Li, C. Liu, Q. Fu, M. S. Ye, Synthesis and Raman analysis of 1D-ZnO nanostructure via vapor phase growth, Appl. Surf. Sci. 240, 175 (2005).
57. F. Ren, C. Z. Jiang, H. B. Chen, Y. Shi, C. Liu, J. B. Wang, Metal alloy and monoelemental nanoclusters in silica formed by sequential ion implantation and annealing in selected atmosphere, Physica B-CONDENSED MATTER 353, 92 (2004).
58. T. Asanuma, T. Matsutani, C. Liu, T. Mihara, and M. Kiuchi, Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma, J. Appl. Phys. 95, 6011 (2004).
59. T. Matsutani, T. Asanuma , C. Liu, M. Kiuchi , and T. Takeuchi Deposition of SiO2 films by low-energy ion-beam induced chemical vapor deposition using hexamethyldisiloxane, Surf. Coat. Technol. 177-178, 365 (2004).
60. T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi and T. Takeuchi, Ion-assisted chemical vapor deposition of Si-C film with organosilicon precursor, Surf. Coat. Technol. 169-170, 624 (2003).
61. C. Liu, T. Matsutani, T. Asanuma, and M. Kiuchi, Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition, Solid State Commun. 126, 509 (2003).
62. W. K. Zhao, L. Zhou, C. Liu, L. Hu, Y. Fang, and M. Kiuchi, Photocatalytic activity of TiO2 prepared by liquid phase deposition, Acta Chim. Sinica 61, 699 (2003).
63. C. Liu, T. Matsutani, T. Asanuma, and M. Kiuchi, Structural, electrical and optical properties of indium tin oxide films prepared by low-energy oxygen-ion-beam assisted deposition, Nucl. Instr. Meth. B, 206, 348 (2003).
64. T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition, Nucl. Instr. Meth. B, 206, 343 (2003).
65. L. Zhou, C. Liu, W. Zhao, L. Hu, Y. Fang, Photocatalytic activity of Fe3+-doped TiO2 thin films prepared via liquid phase deposition, Chinese J. Catal. 24, 359 (2003).
66. C. Liu, T. Matsutani, T. Asaluma, K. Murai, M. Kiuchi, E. Alves, and M. Reis, Room-temperature growth of crystalline indium tin oxide films on glass using low energy oxygen ion beam assisted deposition, J. Appl. Phys. 93, 2262 (2003).
67. C. Liu, T. Matsutani, N. Yamamoto, and M. Kiuchi, High-quality indium tin oxide films prepared at roome temperature by oxygen ion beam assisted deposition, Europhys. Lett. 59, 606 (2002).
68. C. Liu, E. Alves, A. R. Ramos, M. F. da Silva, J. C. Soares, T. Matsutani, and M. Kiuchi, Annealing behavior and lattice location of Mn+ implanted GaN, Nucl. Instr. Meth. B, 191, 544 (2002).
69. E. Alves, C. Liu, E. B. Lopes, M. F. da Silva, J. C. Soares, J. Soares, C. Boemare, M. J. Soares, and T. Monteiro, Study of calcium ion implanted GaN, Nucl. Instr. Meth. B 190, 625 (2002).
70. T. Monteiro, C. Boemare, M. J. Soares, E. Alves, and C. Liu, Green and red emission in Ca implanted GaN samples, Physica B 308-310, 42 (2001).
71. T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, Ion beam induced chemical vapor deposition of hydrogenated amorphous siliconcarbide films with organosilicon, Journal of The Surface Finishing Society of Japan 52, 891 (2001).
72. E. Alves, C. Liu, M. F. da Silva, J. C. Soares, J. Soares, and T. Monteiro, Doping of GaN by ion implantation, MRS Fall Meeting 2000, Boston, Nov. 25-28, 2000, Mater. Res Soc. Symp. Proc. 647, O4.2.1 (2001).
73. C. Liu, A. Wenzel, B. Rauschenbach, E. Alves, A. D. Sequeira, N. Franco, M. F. da Silva, J. C. Soares, and X. J. Fan, Amorphization of GaN by ion implantation, Nucl. Instr. Meth. B 178, 200 (2001).
74. E. Alves, C. Liu, J. C. Waerenborgh, M. F. da Silva, and J. C. Soares, Study of Fe ion implanted GaN, Nucl. Instr. Meth. B, 175-177, 241 (2001).
75. C. Liu, E. Alves, A. Sequera, N. Franco, M. F. da Silva, and J. C. Soares, Fe ion implantation in GaN: damage, annealing, and lattice site location, J. Appl. Phys. 90, 81 (2001).
76. A. Wenzel, C. Liu, H. Karl, M. Schreck and B. Rauschenbach, Mg ion implanted dopants in gallium nitride, IEEE-Proc. of the Intern. Conf. on Ion Implantation Technol. 2000, p. 99 (2001).
77. C. Liu, A. Wenzel, J. W. Gerlach, X. J. Fan, and B. Rauschenbach, Annealing study of ion implanted GaN, Surf. Coat. Technol. 128-129, 455 (2000).
78. C. Liu, Structural Characterization of Ion Implanted Gallium Nitride, Shaker, Aachen, 2000 (ISBN:3-8265-7107-X).
79. C. Liu, M. Schreck, A. Wenzel, B. Mensching, and B. Rauschenbach, Damage buildup and removal in Ca-ion implanted GaN, Appl. Phys. A 70, 53 (2000).
80. C. Liu, A. Wenzel, and B. Rauschenbach, Structural characterization of Ca-ion implanted GaN, IEEE-Proc. of Intern. Conf. on Ion Implantation Technology 1998, p. 881 (2000).
81. A. Wenzel, C. Liu, and B. Rauschenbach, Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN, Mater. Sci. & Eng. B 59, 191 (1999).
82. C. Liu, A. Wenzel, K. Volz, and B. Rauschenbach, Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride, Nucl. Instr. Meth. B 148, 396 (1999).
83. W. Limmer, W. Ritter, R. Sauer, B. Mensching, C. Liu, and B. Rauschenbach, Raman scattering in ion-implanted GaN, Appl. Phys. Lett. 72, 2589 (1998).
84. C. Liu,, B. Mensching, M. Zeitler, K. Volz, and B. Rauschenbach, Ion implantation in GaN at liquid-nitrogen temperature: structural characteristics and amorphization, Phys. Rev. B 57, 2530 (1998).
85. B. Mensching, C. Liu, B. Rauschenbach, K. Kornitzer, and W. Ritter, Characterization of Ca and C implanted GaN, Mater. Sci. & Eng. B 50, 105 (1997).
86. C. Liu, B. Mensching, K. Volz, and B. Rauschenbach, Lattice expansion of Ca and Ar ion implanted GaN, Appl. Phys. Lett. 71, 2313 (1997).
