Publications
Some Recent Publications
1. A. V. Dvurechenskii, J.V. Smagina, R.Groetzschel, V.A. Zinoviev, V.A. Armbrister, P.L. Novikov, S.A. Teys, A.K. Gutakovskii. Ge/Si quantum dot nanostructures grown with low-energy ion beam-epitaxy.- Surface & Coating Technology V.196, No. 1-3, 25-29 (2005).
2. A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov. Germanium Self-Assembled Quantum Dots in Silicon: Growth, Electronic Transport, Optical Phenomena, and Devices (Review). – in: Handbook of Semiconductor Nanostructures and Nanodevices, Volume 1, edited by A.A. Balandin and K.L. Wang (American Scientific Publishers, NY), p. 33-102, 2006.
3. A.V. Dvurechenskii, P.L. Novikov, Y. Khang, Zh.V. Smagina, V.A. Armbrister, V.G. Kesler, A.K. Gutakovskii. Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on SiO2 films, Proc. SPIE, 2006, v.6260, p.626006-626006A-8.
4. E.I. Gatskevich, G.D. Ivlev, V.A. Volodin, A.V. Dvurechenskii, M.D. Efremov, A.I. Nikiforov, A.I. Yakimov. Pulsed laser annealing of Ge/Si heterostructures with quantum dots. – in: Physics, Chemistry and Application of Nanostructures, edited by V.E. Borisenko, S.V. Gaponenko and V.S. Gurin (World Scientific Publishing Co. Ltd., Singapore, 2007), p. 435-438.
5. A.V. Dvurechenskii, A.I. Yakimov, N.P. Stepina, V.V. Kirienko, P.L. Novikov. SiGe nanodots in electro-optical SOI devices. - In: Nanoscaled Semiconductor-on-Insulator Structures and devices, ed. S. Hall, Springer, 2007, p. 113-128.
6. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Enhanced oscillator strength of interband transitions in coupled Ge/Si quantum dots. – Applied Physics Letters, 2008, v. 93, № 13, p. 132105.
7. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Asymmetry of single-particle hole states in a strained Ge/Si double quantum dots. – Phys. Rev. B, 2008, v. 78, № 16, p. 165310.
8. A.F. Zinoveva, A.V. Dvurechenskii, N.P. Stepina, A.S. Deryabin, A.I. Nikiforov. R. Rubinger, N.A. Sobolev, J.P. Leitão, M.C. Carmo. Spin resonance of electrons localized on Ge/Si quantum dots. - Phys. Rev. B, 2008, v. 77, p. 115319.
9. J.V. Smagina, P.L. Novikov, V.A. Armbrister, V.A. Zinoviev, A.V. Nenashev, A.V. Dvurechenskii. Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation – Physica B, 2009, v. 404, 4712–4715.
10. N.P. Stepina, E.S. Koptev, A.V. Dvurechenskii, and A.I. Nikiforov. Strong to weak localization transition and two-parameter scaling in a two-dimensional quantum dot array. - Phys. Rev. B, 2009, v. 80, 125308.
11. A.V. Nenashev, F. Jansson, S.D. Baranovskii, R. Osterbacka, A.V. Dvurechenskii, F. Gebhard. Role of diffusion in two-dimensional bimolecular recombination. Appl. Phys.Lett., 2010, V. 96, No. 21, 213304.
12. A.V. Nenashev, A.V. Dvurechenskii. Strain distribution in quantum dot of arbitrary polyhedral shape: Analytical solution. J. Appl. Phys., 2010, V. 107, No. 6, 064322.
13. A.I. Yakimov, A.A. Bloshkin, and A.V. Dvurechenskii. Calculating the energy spectrum and electronic structure of two holes in a pair of strained Ge/Si quantum dots. – Phys. Rev. B, 2010, 81, № 11, 115434.
14. A.F. Zinovieva, A.V. Dvurechenskii, N.P. Stepina, A.I. Nikiforov, A.S. Lyubin, L.V. Kulik. Direct measurements of spin relaxation times of electrons in tunnel-coupled Ge/Si quantum dot arrays, Phys. Rev. B. 2010, V.81, 113303.
