Publications
Journal papers
SCI
1. L. Stojanovska-Georgievska, N. Novkovski and E. Atanassova, Charge trapping at Pt/high-k dielectric (Ta2O5) interface, Physica B: Condensed Matter 406, 3348-3353 (2011)
2. A. Skeparovski, N. Novkovski, E. Atanassova, A. Paskaleva and V. K. Lazarov, Effect of Al gate on the electrical behaviour of Al doped Ta2O5 stacks, J. Phys. D: Appl. Phys. 44, 235103 (10pp) (2011)
3. N. Novkovski and E. Atanassova, Charge trapping during constant current stress in Hf-doped Ta2O5 films sputtered on nitrided Si, Thin Solid Films 519, 2262-2267 (2011)
4. E. Atanassova, N. Novkovski, A. Paskaleva, D. Spassov, Constant current stress-induced leakage current in mixed HfO2- Ta2O5 stacks, Microelectron. Reliab. 50, 794-800 (2010)
5. D. Spassov, E. Atanassova, N. Novkovski, Electrical behaviour of Ti-doped Ta2O5 on N2O and NH3 nitrided Si , Semicond. Sci. Technol. 24, 075024 (10pp) (2009)
6. N. Novkovski, Analysis of the improvement of Al-Ta2O5/SiO2-Si structures reliability by Si substrate plasma nitridation in N2O, Thin Solid Films 517, 4394-4401 (2009)
7. A. Skeparovski1, N. Novkovski, E. Atanassova, D. Spassov and A. Paskaleva, Temperature dependence of leakage currents in Ti doped Ta2O5 films on nitrided silicon, J. Phys. D: Appl. Phys. 42, 095302 (8pp) (2009)
8. A. Paskaleva, E. Atanassova and N. Novkovski, Constant current stress of Ti-doped Ta2O5 on nitrided Si, J. Phys. D: Appl. Phys. 42, 025105 (2009)
9. N. Novkovski and A. Tanusevski, Origin of the optical absorption of In2O3 thin films in the visible range, Semicond. Sci. Technol. 23, 095012 (4pp) (2008)
10. N. Novkovski, A. Skeparovski and E. Atanassova, Charge trapping effect at the contact between a high-work-function metal and Ta2O5 high-k dielectric, J. Phys. D: Appl. Phys. 41, 105302 (2008)
11. E. Atanassova, A. Paskaleva and N. Novkovski, Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks, Microelectron. Reliab., 48, 514-525 (2008)
12. N. Novkovski, Limitations in the methods of determination of conduction mechanisms in high-permittivity dielectric nano-layers, Physica B: Condensed Matter 398, 28-32 (2007)
13. N. Novkovski, and E. Atanassova, Frequency dependence of the effective series capaci¬tance of metal-Ta2O5/SiO2-Si structures, Semicond. Sci. Technol. 22, 533-536 (2007)
14. N. Novkovski, E. Atanassova and A. Paskaleva, Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon, Appl. Surf. Sci. 253, 4396-4403 (2007)
15. N. Novkovski, Conduction and charge analysis of metal (Al, W and Au)-Ta2O5/SiO2-Si structures, Semicond. Sci. Technol. 21, 945-951 (2006)
16. N. Novkovski and E. Atanassova, Wear-out and breakdown of thermally grown Ta2O5 insulating films on plasma oxynitrided Si substrates, Phys. Stat. Sol. (a) 203, 2012-2017 (2006)
17. N. Novkovski and E. Atanassova, A comprehensive model for the I-V characteristics of metal Ta2O5/SiO2-Si structures, Appl. Phys. A 83, 435-445 (2006)
18. N. Novkovski and E. Atanassova, Wear-out of Al-Ta2O5/SiO2-Si structures under dynamic stress, Appl. Surf. Sci. 252, 3834-3837 (2006)
19. N. Novkovski and E. Atanassova, Wearout and breakdown of RF Sputtered Ta2O5 Films on Silicon, Appl. Phys. A 81, 1455-1458 (2005)
20. N. Novkovski and E. Atanassova, Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O, Appl. Phys. A 81, 1191-1195 (2005)
21. E.Atanassova, A.Paskaleva, N. Novkovski, and M. Georgieva, Conduction and reliability behavior of thermal Ta2O5-Si structures and the effect of the gate electrode, J. Appl. Phys. 97, 094104 (2005) (11 pages)
22. N. Novkovski and E. Atanassova, Origin of the stress-induced leakage currents in Al-Ta2O5/SiO2-Si structures, Appl. Phys. Lett. 86, 152104 (2005) (3 pages)
23. N. Novkovski, A. Paskaleva and E. Atanassova, Dielectric properties of rf sputtered Ta2O5 on rapid theramlly nitrided Si, Semicond. Sci. Technol. 20, 233-238 (2005)
24. N. Novkovski and E. Atanassova, Injection of holes from the silicon substrate in Ta2O5 films grown on silicon, Appl. Phys. Lett. 85, 3142-3144 (2004)
25. B. Pesic, L.J. Vracar, N. Stojadinovic, M. Pecovska-Djorgjevic, and N. Novkovski, Stress induced leakage currents in thin silicon dioxide films, J. Mater. Sci.Materl. El. 14, 805-807 (2003)
26. A. Paskaleva, N. Novkovski, E. Atanassova and M. Pecovska-Gjorgjevich, Density and spatial distribution of MERIE-like plasma induced defects in SiO2, Phys. Stat. Sol. (a) 199 (2), 243-249 (2003)
27. M. Pecovska-Gjorgjevich, N. Novkovski and E. Atanassova, Electrical properties of thin RF sputtered Ta2O5 films after constant current stress, Microelectronics Reliability 43, 235-241 (2003)
28. N. Novkovski, Breakdown and generation of interface states in oxynitride thin films on silicon, Semicond. Sci. Technol. 17, 93-96 (2002)
29. E. Atanassova, N. Novkovski, A. Paskaleva and M. Pecovska-Gjorgjevich, Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si, Solid-State Electronics 46 (11), 1887-1898 (2002)
30. N. Novkovski, Comparison of the dynamic stress breakdown between oxide and oxy-nitride thin films on silicon, Phys. Stat. Sol. (a) 182 (2), R8-R9 (2000)
31. N. Novkovski, On the impeded growth of oxide films on Si in N2O ambient, Appl. Phys. A 68, 573-575 (1999)
32. N. Novkovski, M. Pecovska-Gjorgjevich, E. Atanassova and T, Dimitrova, Stress degradation of Low Field Leakage in Alumina Gate MOS Structures Containing RF Magnetron Sputtered Thin Ta2O5 films, Phys. Stat. Sol. (a) 172, R9-R10 (1999)
33. M. Dutoit, P. Letourneau, J. Mi, N. Novkovski, J. Manthey, and J. Solo de Zaldivar, Optimization of thin Si oxynitride films produced by rapid thermal processing for applications in EEPROMs, J. Electrochem. Soc. 140, 549-555 (1993)
34. N. Novkovski, M. Dutoit, and J. Solo de Zaldivar, Dielectric breakdown in thin Si oxynitride films produced by rapid thermal processing, Appl. Phys. Lett. 56, 2120-2122 (1990)
35. N. Novkovski, I Aizenberg, E. Goin, E. Fullin and M. Dutoit, Characterization of very thin Si oxynitride films produced by rapid thermal processing, Appl. Phys. Lett. 54, 2408-2410 (1989)
36. N. Novkovski and Gj. Ivanovski, On the theory of energy level distribution for regular spectra, Physics Letters A 131, 178-180 (1988)
37. Gj. Ivanovski, N. Novkovski and V. Urumov, Energy levels of a piecewise linear oscillator with a barier, Physics Letters A 125, 1-2 (1987)
38. Gj. Mavrodiev, M. Gajdardziska and N. Novkovski, Electrical and optical properties of SnO:F films prepared on glass substrates by chemical spraying method, Thin Solid Films 113, 93-100 (1984)
SCI extended
39. E. Atanassova, D. Spassov, N. Novkovski, and A. Paskaleva, Constant current stress of lightly Al-doped Ta2O5, Materials Science in Semiconductor Processing 15, 98-107 (2012)
40. Aleksandar Skeparovski and Nenad Novkovski, On the nature of the high-k dielectrics leakage current reduction by postdeposition annealing, J. Optoelectron. Adv. Mat. 9 (4), 897-901 (2007)
41. N. Novkovski and E. Atanassova, Approaching the limit of the SiO2 possibilities for application in nanoscale microelectronics, J. Optoelectron. Adv. Mat. 8 (3), 1238-1242 (2006)
42. M. Dutoit, D. Bouvet, J. Mi, N. Novkovski, and P. Letourneau, Thin SiO2 films nitrided by rapid thermal processing in NH3 and N2O for applications in EEPROMs, Microelectron. J. 25, 539-551 (1994)
Book chapters
1. Lihnida Stojanovska-Georgievska and Nenad Novkovski, Computer-Added C-V Measurement and Analysis of Metal/High-κ/Si Structures, Advances in Intelligent and Soft Computing, ICT Innovations ed. Ljupcho Kocarev, Volume 150/2012, 301-310 (2012)
2. N. Novkovski "Progress and limitations in magnetic field measuremets" in "Geomagnetics in support of aeronautical safety", Eds. J.L. Rasson and T. Delipetrov, 2006 Springer, pp. 201-212
Conference proceedings papers
1. E. Atanassova, D. Spassov, N. Novkovski and A. Paskaleva, Stress-Induced Leakage Current in Lightly Al-doped Ta2O5, 2012 28th International Conference on Microelectronics, Proceedings, MIEL2012, pp. 323-326
2. A. Skeparovski, N. Novkovski and A. Paskaleva, Charge Trapping Properties in Ti-doped Ta2O5 Films on Nitrided Si, 2012 28th International Conference on Microelectronics, Proceedings, MIEL2012, pp.327-330
3. L.S. Georgievska, N. Novkovski, E. Atanassova, Charge Trapping at Low Injection Currents in (TiN, Mo, Pt)/Ta2O5:Hf/SiO2/Si Structures, 2012 28th International Conference on Microelectronics, Proceedings, MIEL2012, pp. 331-334
4. A. Skeparovski, N. Novkovski, D. Spassov, E. Atanassova, V. K. Lazarov, Properties of Al doped Ta2O5 based MIS capacitors for DRAM applications, 2010 27th International Conference on Microelectronics Proceedings (MIEL) p. 455-458, 16-19 May, 2010
5. N. Novkovski, E. Atanassova and A. Paskaleva, Model Based Analysis of Electrical and Wear-out Characteristics of Ultra-thin Ta2O5/SiOxNy Stacks on Si, Proc. 26nd international conference on microelectronics, Vol. 2, p. 533-536, 10-14 May, 2008
6. A. Skeparovski, N. Novkovski, A. Paskaleva and E. Atanassova, Constant Current Stress Characteristics of Ti Dopped Ta2O5 on Silicon, Proc. 26nd international conference on microelectronics, Vol. 2, p. 579-582, 10-14 May, 2008
7. N. Novkovski, Role of the Ultrathin Silicon Oxide Interfacial Layer in High-k Dielectrics Properties, AIP Conference Proceedings, Volume 899, pp. 83-86, SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION, Istanbul, Turkey, August 2006
8. N. Novkovski and E. Atanassova, Reliability Properties of Ta2O5 Films Grown on N2O Plasma Nitrided Silicon, Proc. 25th international conference on microelectronics (MIEL 2006), Vol. 2, p. 585-588, Nish, Serbia and Montenegro, 14-17 May, 2006
9. N. Novkovski and E. Atanassova, Stress characteristics of RF sputtered Ta2O5 films on silicon, Int. Conf. on Advances in Processing Testing and Application of Dielectric Materials, APTADM'2004, 16-19, Wroclaw 2004
10. N. Novkovski and E. Atanassova, Constant current stress characteristics of RF sputtered Ta2O5 films on silicon, Proc. 24nd Int. Conf. Microel. (MIEL 2004), 683-684
11. M. Pecovska-Gjorgjevich, N. Novkovski, E. Atanassova and D. Spasov, The effect of gate material on dielectric characteristics and conduction of Ta2O5 MOS structures, Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, Vol. 2, 5-9 (2004)
12. M. Pecovska-Gjorgjevich, E. Atanassova, N. Novkovski, D. Spasov, Dielectic characteristic and conduction mechanisms of Ta2O5 MOS structures with various gate electrodes, Proceedings of the Fifth General Conference of the Balkan Physical Union (BPU-5), Vrnjacka Banja, Serbia and Montenegro, August 25-29, p.1615-16-8, 2003
13. M. Pecovska-Gjorgjevich, N. Novkovski, E. Atanassova, Stress induced leakage currents in thin Ta2O5 films, Proc. 23nd international Conference on Microelectronics (MIEL), Niš, Yugoslavia, 12-15 May, 759-762, (2002)
14. A. Paskaleva, E. Atanassova, N. Novkovski, M. Pecovska-Gjorgjevich, Conduction Mechanisms in thin Ta2O5 films, Proc. 23nd international Conference on Microelectronics (MIEL), Niš, Yugoslavia, 12-15 May, 755-758, (2002)
15. N. Novkovski, M. Pecovska-Gjorgjevich, E. Atanassova and T. Dimitrova, Stress Induced degradation in RF Deposited Ta2O5 films on Silicon, Proc. 22nd international Conference on Microelectronics (MIEL), Niš, Serbia, 14-17 May, 377-388 (2000)
16. M. Pecovska-Gjorgjevich, N. Novkovski, E. Atanassova and T. Dimitrova, Leakage currents in RF-sputtered Ta2O5 films on Silicon, Proceedings of the fourth BPU conference, Veliko Trnovo (2000)
17. N. Novkovski, On the role of the insulator/silicon interface in the destructive dielectric breakdown in oxide and oxy-nitride films, Proc. Of the Eleventh Int. School on Condensed Matter Physics (ISCMP), New materials for the information technology for the third milenium, Varna, Bulgaria, 4-8 Sept. Editors: J.M. Marshall, N. Kirov, A. Vavrek and J.M. Maud (2000)
18. N. Novkovski, On the role of the interface with substrate in the destructive dielectric breakdown of very thin insulating films gown on silicon, Proc. 1998 IEEE International Conference on Conduction and Breakdown in Solid Dielectrics, Vasteras, Sweden, 520-523 (1998)
19. N. Novkovski, A model of breakdown for very thin insulating films on silicon, Proc. Of the Tenth Int. School on Condensed Matter Physics (ISCMP), Thin film materials and devices - developments in science and technology, Varna, Bulgaria, 1-4 Sept. Editors: J.M. Marshall, N. Kirov, A. Vavrek and J.M. Maud, 405-408 (1998)
20. N. Novkovski, The use of the visual programming language HP VEE in data acquisition and processing, SEFI WGP Seminar EMEPE '98. Experiments and Measurements in engineering physics education, Brno, Czech Republic, 78-81 (1998)
21. D. Bouvet, N. Novkovski, J. Mi, P. Letourneau, M. Dutoit, F. Pio, C. Riva and N. Belafiore, Comparaison of RTP N2O- and NH3-nitrided thin SiO2 films produced by rapid thermal processing for applications in EEPROM's, in J. Borel, P. Gentil, J.P. Noblanc, A. Nouailhat and M. Verdone (eds.), Proc. ESSDERC '93, Editions Frontières, Gyf-Sur-Yvette, 407 (1993)
22. M. Dutoit, E. Goin, N. Novkovski, I. A. AIzenberg, J. Manthey and Solo de Zaldivar, Thin nitrided SiO2 films for EEPROMs, Proc. SSDM '90, 175-178, Sendai, Japan (1990)
Papers in other journals
1. N. Novkovski and E. Atanassova, Peculiarities of capacitance measurements of nanosized high-k dielectrics: case of Ta2O5, J. Optoelectron. Adv. Mat.-Symposia 1 (3), 398-403 (2009)
2. M. Pecovska-Gjorgjevich, D. Spasov, N. Novkovski, E. Atanassova, Dielectric characteristics and reliability tests for thin Au-Ta2O5-SiO2-Si structures, Rom. Journ. Phys. 50, 1009-1017, (2005)
3. N. Novkovski and E. Atanassova, Interface states in RF sputtered Ta2O5 films on silicon, Physica Macedonica 55, 19-26 (2005)
4. M. Pecovska-Gjorgjevich, D. Spasov, N. Novkovski, E. Atanassova, Dielectric characteristics and reliability tests for thin Au-Ta2O5-SiO2-Si structures, Rom. Journ. Phys. 50, 1009-1017, (2005)
5. A. Skeparovski and N. Novkovski and E. Atanassova, Conduction mechanism in Ta2O5/SiO2 structure films on silicon, Physica Macedonica 53/54, 67-71 (2004)
6. N. Novkovski, Generation of interface states in oxyde and oxy-nitride thin films on silicon during the Fowler-Nordheim injection, Physica Macedonica 50, 65-72 (2000)
7. M. Pecovska-Gjorgjevich, N. Novkovski, E. Atanassova and D. Spasov, Dielectric characteristics of thermally oxidized Ta2O5 thin films, Physica Macedonica 50, 59-64 (2000)
8. N. Novkovski, E. Atanassova, T. Dimitrova, RF Sputtered Ta2O5 Films on Si - Dielectric and Breakdown Characteristics, Physica Macedonica 49, p. 9 (1999)
9. N. Novkovski, A. Stefanovska, On the possible mechanical character of the respiratory frequency modulation of the heart rate, Physica Macedonica 49, p. 41 (1999)
10. N. Novkovski and M. Davkova, Experimental setup for quasi-static C-V measurements of MOS structures, Physica Macedonica 48, p. 17-22 (1998)
11. Gj. Ivanovski and N. Novkovski, On the theory of level spacing distribution in typical quantum systems, Fizika, 22, suppl. 2, 125 (1990)
