Publications
1. J. Wu, et al.
Self-assembling of InAs quantum dots on GaAs(001) in molecular beam epitaxy
Advances in Nanotechnology, Vol. 1, Chapter 7, pp. 209-222 (Nova Scientific Publishers, 2009)
2. J. Wu
Temperature behaviors of In(Ga)As/GaAs quantum dots and patents on the T-sensitivity of the lasers Recent Patents on Materials Science 2009, 2(3) 244-251
3. J. Wu, et al.
Epitaxial semiconductor quantum wires Journal of Nanosci. Nanotech. 2008, 7(8): 3300-3314
4. J. Wu et al.
Evolution of MBE InAs/GaAs(001) quantum dots fabricated using a rapid growth rate (Chinese)
Micronanoelectronic Technology 2009, 46(2): 79-84
5. J. Wu et al.
Investigations on the growth and configurations of self-assembled quantum dots in molecular beam epitaxy (Chinese) Micronanoelectronic Technology 2008, 45(8): 435-440; 45(9): 498-503
6. J. Wu et al.
Effect of growth mode on the 2- to 3-dimensional transition in molecular-beam epitaxy of InAs on the vicinal GaAs(001) substrate Nanotech. 2007, 18: 265304(4)
7. J Wu et al.
Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy Nanotech. 2007, 18: 165301(5)
8. J. Wu et al.
Self-assembled InAs quantum wires on InP(001) J. Cryst. Growth 2000, 219(1-2): 180-183
9. J. Wu et al.
InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001) J. Cryst. Growth 1999, 197(1-2): 95-98
10. J. Wu et al.
Breaking up of misfit dislocations in Ga0.3In0.7As/GaAs heterostructure Appl. Phys. Lett. 1995, 67(6): 846-848
