Publications
Selected publications since 2009 - :
1. A. Szekeres, S. Bakalova, S. Grigorescu, A. Cziraki, G. Socol, C. Ristoscu, I.N. Mihailescu, “AlN:Cr thin films synthesized by pulsed laser deposition: Studies by X-ray diffraction and spectroscopic ellipsometry”, Appl. Surf. Sci. 255 (2009) 5271-5274.
2. A. Szekeres, E. Vlaikova, T. Lohner, P. Petrik, G. Huhn, K. Havancsak, I. Lisovskyy, S. Zlobin, I. Z. Indutnyy, P. E. Shepeliavyi, “Ellipsometric characterization of SiOx films with embedded Si nanoparticles”, Vacuum, 84 (2009) 115-118.
3. S. Bakalova, A. Szekeres, G. Huhn, K. Havancsak S. Grigorescu, G. Socol, C. Ristoscu, I. N. Mihailescu, ”Surface morphology studies of AlN films synthesized by pulsed laser deposition”, Vacuum, 84 (2009) 155-157.
4. S. Bakalova, A.Szekeres, A. Cziraki, G. Huhn, K. Havancsak, S. Grigorescu, G. Socol, E. Axente, I. N. Mihailescu, R. Gavrila, “Growth dynamics of pulsed-laser-deposited AlN films”, J. Optoelectron.&Adv. Mater. 11(10) (2009) 1479-1482.
5. T. Hineva, A. Szekeres, P. Petkov, M. Anastasescu, M. Gartner, K. Salamon, ”Vacuum thermal evaporated (AsSe)1-x(AgI)x Films: Studies By Spectroscopic Ellipsometry And Atomic-Force Microscopy”, J. Optoelectron.&Adv. Mater. 11(9) (2009) 1265-1268.
6. S. Simeonov, I Minkov, K. Ivanova, A Szekeres, M. Gartner, M. Niculescu, M. Anasstasescu, “Effect of deep levels on the admittance characteristics of sol-gel TiO2/Si structures”, J. Optoelectron.&Adv. Mater. 11(9) (2009) 1505 – 1508.
7. S Alexandrova, A Szekeres, “Nano-sized silicon oxide thermally grown on plasma hydrogenated silicon”, J. Optoelectron.&Adv. Mater. 11(9) (2009) 1284-1287
8. T. Lohner, A. Szekeres, E. Vlaikova, P. Petrik, A. L. Toth, G. Huhn, K. Havancsak, A. Cziraki, I. Lisovskyy, I. Z. Indutnyy, P. E. Shepeliavyi, ”Optical models for ellipsometric characterization of high temperature annealed nanostructured SiOx films”, J. Optoelectron.&Adv. Mater. 11(9) (2009) 1288-1291.
9. S. Simeonov, I Minkov, A Szekeres, K. Ivanova, S. Grigorescu, G. Socol, C. Ristoscu, I. N. Mihailescu, “Influence of deep levels on the admittance of AlN/Si structures with pulsed laser deposited AlN films”, J. Optoelectron.&Adv. Mater. 11(9) (2009) 1292-1295.
10. V. Pamukchieva, A. Szekeres, D. Arsova, “Study of photoinduced irreversibile changes in Ge-As-S thin films by spectroscopic ellipsometry”, J. Optoelectron.&Adv. Mater. 11(9) (2009) 1249-1252.
11. E. Halova, S. Alexandrova, A. Szekeres, “Fixed oxide charge, interface traps and border traps in MOS structures, grown on plasma hydrogenated (100)-pSi”, J. Optoelectronics&Advanced Materials, 11(10) (2009) 1498.
12. G. Dobrescu, M. Anastasescu, M. Stoica, A. Szekeres, N. Todorova, C. Trapalis, M. Gartner, “A Fractal Analysis Of TiO2 Sol-Gel Films Treated Under Different Atmospheres”, J. Optoelectron.&Adv. Mater. 11(9) (2009) 1359 – 1362.
13. S. Simeonov, I. Minkov, A.Szekeres, S. Grigorescu , G. Socol, C. Ristoscu, I. N. Mihailescu, “Trap space charge limited current in pulsed laser deposited AlN:Cr films”, Procs. Intern. Semiconductor Conf., CAS ,Vol. 1 (2009) pp. 375-378.
14. V. Pamukchieva, A. Szekeres, K. Todorova, M. Fabian, E.Svab, Zs. Revay, L. Szentmiklosi, “Evaluation of basic physical parameters of quaternary Ge-Sb-(S,Te) chalcogenide glasses”, J. Non-Cryst. Solids 355 (50-51) (2009) 2485-2490.
15. V. Pamukchieva, A. Szekeres, K. Todorova, E. Svab, M. Fabian, “Compositional dependence of the optical properties of new quaternary chalcogenide glasses of Ge–Sb–(S,Te) system”, Opt. Mater. 32 (2009) 45-48.
16. Simeonov S., Minkov I., Szekeres A., Grigorescu S., Socol G., Ristoscu C., Mihailescu I.N., “Trap space charge limited current in pulsed laser deposited AlN:Cr films” , 2009 Procs. Internat. Semiconductor Conf., CAS 2, art. no. 5336703, pp. 375-378
17. A. Szekeres, E. Vlaikova, T. Lohner, A. L. Toth, I. Lisovskyy, S. Zlobin, P. E. Shepeliavyi, “Characterization of oblique deposited nanostructured SiOx films by ellipsometric and IR spectroscopies”, Diffusion and Defect Data Pt. B: Solid State Phenomena Vol. 159 (2010) pp 149-152
18. S. Alexandrova, A. Szekeres, “Thickness-dependent interface parameters of silicon oxide films grown on plasma hydrogenated silicon”, Diffusion and Defect Data Pt. B: Solid State Phenomena Vol. 159 (2010) pp. 163-166.
19. A. Szekeres, S. Simeonov, S. Bakalova, I. Minkov, A. Cziraki, C. Ristoscu, G. Socol, G. Dorcioman, I. N. Mihailescu, “Effect of incident laser fluence on the structure of pulsed-laser deposited AlN films”, J. Optoelectron.&Adv. Mater. 12(3) (2010) 542-546.
20. Simeonov S, Minkov I., Szekeres A., Ristoscu C., Sogol G., Dorcioman G., Mihailescu I. N., “Study of the charge transport mechanism in AlN:Cr films synthesized by pulsed laser deposition “, J. Physics: Conf. Series 223 (1) (2010) art. no. 012037
21. A Szekeres, E Vlaikova, A Cziraki, P Petrik, G Socol, C Ristoscu, I N Mihailescu, "Ellipsometric characterization of AlN films synthesized by Pulsed-Laser-Deposition”, J. Phys.: Conf. Series 253 (2010) art. no. 012032
22. I P Minkov, S Simeonov, A Szekeres, C Ristoscu, G Socol, S Grigorescu, I N Mihailescu, “Study of the charge transport mechanism in pulsed laser deposited AlN:Cr films”, J. Phys.: Conf. Series 253 (2010) art. no. 012036
23. M Fábián, E Sváb, V Pamukchieva, A Szekeres, S Vogel, U Ruett, “Study of As2Se3 and As2Se2Te glass structure by neutron- and X-ray diffraction methods”, J. Phys.: Conf. Series 253 (2010) art. no. 012053
24. S Alexandrova, A Szekeres, R Yu Holiney, L Matveeva, “Electroreflectance spectroscopy study of hydrogen plasma immersion ion implanted silicon with ultrathin oxide film”, J. Phys.: Conf. Series 253 (2010) art. no. 012037
25. V Pamukchieva, A Szekeres, K Todorova, “Single-oscillator description of spectral dependence of the refractive index of new chalcogenide Ge-Sb-(S,Te) glasses”, J. Phys.: Conf. Series 253 (2010) art. no. 012033
26. S Alexandrova, A Szekeres, E Halova, “Defects in SiO2/Si Structures Formed by Dry Thermal Oxidation of RF Hydrogen Plasma Cleaned Si“, J. Phys.: Conf. Series 15 (2010) art. no.012037
