Publications
Galashev, A.Y., Stability of Single Vacancies and Multiple Vacancies in a Nickel Nanoparticle, Poverkhnost, 2005, no. 1, pp. 77–84.
Galashev, A.Y. and Skokov, V.N., The Nucleation of a Nanoparticle of Silicon Dioxide in a Closed Domain. Computer Experiment, High Temp. 2003, vol. 41, no. 3, pp. 327–331.
Galashev, A.E., Growth of a Si Nanocrystal in an Oxygen Atmosphere. Computer Simulation, Crystallogr. Rep. 2002, vol. 47 (Suppl. 1), pp. 169–176.
Galashev A.Y., Polukhin V.A., Izmodenov I.A., and Rakhmanova O.R., Molecular Dynamics Simulation of the Physicochemical Properties of Silicon Nanoparticles Containing 73 Atoms, Glass Physics and Chemistry 2007,33, P. 86.
A. Y. Galashev, I. A. Izmodenov, A. N. Novruzov, and O. A. Novruzova Computer Study of Physical Properties of Silicon Nanostructures, Semiconductors, 2007, Vol. 41, No. 2, pp. 190–196.
Galashev, A.Y., Izmodenov, I.A., Rakhmanova, O.R., and Novruzova, O.A., Computer Study of Physico-chemical Properties of Stressed Noncrystalline Silicon Nanoparticles, Poverkhnost, 2007, no. 8, pp. 95–103.
Galashev A.Y., Izmodenov I.A. Computer Investigation of the Structure of Si73 Clusters Surrounded by Hydrogen, Glass Physics and Chemistry 2008, Vol. 34, 173–181.
Galashev A.Y. Thermal Instability of Silicon Fullerenes Stabilized with Hydrogen: Computer Simulation, Semiconductors 2008, 42, 596–603.
Galashev A.Y. Molecular dynamics study of hydrogenated silicon clusters at high temperatures, Molecular Physics. 2009. V. 107. No. 23-24, P. 2555-2568.
Galashev A.Y. Simulation of silicon nanoparticles stabilized by hydrogen at high temperatures, J. Nanopart. Res. 2010. V. 12. P. 3003–3018.
