Publications
1. Gromov D.G., Gavrilov S.A., Dubkov S.V. Formation of carbonic nanostructures using PECVD and glowdischarge plasma at direct current // International Conference on Micro-and Nano-Electronics 2009, edited by K.A.Valiev, A.A.Orlikovsky, Proceedings of SPIE, Vol. 7521 (SPIE, Bellingham, WA, 2010) p.75210Y1-75210Y8.
2. Gromov D. G., Gavrilov S. A., Redichev E. N., Chulkov I. S., Anisimov M. Y., Dubkov S. V., Chulkov S. I. Non-monotonic dependence of temperature of Au nanometer films dissociation into droplets on their thickness on Al2O3 surface // Appl. Phys. A, v.99, 2010, p. 67-71.
3. Gromov D.G., Gavrilov S.A. Manifestation of the heterogeneous mechanism upon melting of low-dimensional systems// Physics of the Solid State, 2009, Vol. 51, No. 10, pp. 2135–2144.
4. Buzdugan A. A., Gavrilov S. A., Gromov D. G., Redichev E. N., Chulkov I. S. Phenomenological Description of Dispersion of 8–60-nm-Thick Silicon Thin Films into Drops on Al2O3 Inert Surface// Semiconductors, 2008, Vol. 42, No. 13, pp. 1487–1491.
5. Gromov D.G., Gavrilov S.A., Redichev E.N., Ammosov R.M.. Kinetics of the melting-dispersion process in copper thin films. Physics of the Solid State, 2007, v.49, No 1, p.178-184.
6. Gromov D.G., Gavrilov S.A., Redichev E.N., Klimovitskaya A.V., Ammosov R.M.. The factors that determine the temperature of fusion of Cu and Ni thin films on inert surfaces. Russian Journal of Physical Chemistry. 2006, V. 80, No 10. p.1650-1655.
7. Gromov D.G., Gavrilov S.A., Redichev A.N., Mochalov A.I., Ammosov R.M. Degradation of thin copper conductors due to low temperature melting // in Micro-and Nanoelectronics 2005, edited by K.A.Valiev, A.A.Orlicovsky, Proceedings of SPIE, Vol. 6260 (SPIE, Bellingham, WA, 2006) p.62600H1-62600H8.
8. Redichev E.N., Gromov D.G., Gavrilov S.A., Mochalov A.I., Ammosov R.M. Combined method of copper electroplating deposition and low temperature melting for damascene technology // in Micro-and Nanoelectronics 2005, edited by K.A.Valiev, A.A.Orlicovsky, Proceedings of SPIE, Vol. 6260 (SPIE, Bellingham, WA, 2006) p. 62601H1-62601H1.
9. Gromov D. G., Gavrilov S. A., Redichev E. N. Influence of the Thickness of Copper Films in Cu/W-Ta-N, Cu/C, and C/Cu/C Layered Structures on the Temperature of the Melting-Dispersion Process. Russian Journal of Physical Chemistry. 2005, V. 79, No 9. p.1394-1400.
10. D.G.Gromov, A.I.Mochalov, A.G.Klimovitskiy, A.D.Sulimin, E.N.Redichev. Approaches to diffusion barrier creation and trench filling for copper interconnection formation // Appl. Phys. A, vol. 81, № 7, 2005, p.1337-1343.
11. Gromov D.G., Mochalov A.I., Pugachevich V.P., Sorokin I.N. Interaction between binary alloy thin films and silicon substrate: the conditions of bilayer formation and effect of additional component // Applied Physics A, 70, 2000, p. 333-340.
12. Gromov D.G., Mochalov A.I., Pugachevich V.P., Kirilenko E.P., Trifonov A.Yu. Study of phase separation in Ti-Co-N thin films on silicon substrate // Appl. Phys. A, 64, 1997, p. 517-521.
13. Pavlov G.Ya., Pugachevich V.P., Gromov D.G., Kudryashova E.B. Arc plasma jet cleaning of the silicon surface before CoSi2/Si contact formation // Applied Physics A, 63, 1996, p. 9-12.
14. Gromov D.G., Mochalov A.I., Pugachevich V.P. CoSi2 formation in contact systems based on Ti-Co alloy with low cobalt content // Appl. Phys. A, v. 61, 1995, p.565-567.
15. Gromov D., Pugachevich V. Modified methods for the calculation of real Schottky-diode parameters// Appl. Phys. A, v. 59, 1994, p. 331-333.
