Publications
（1）Peng Zhang, Yiqi Zhuang, Zhongfa Ma, Yong Wu, Extraction the parameters of the donnor-like traps in nano-MOSFET, Science of China G, 2010 Vol. 40 (4): 395-399. (In Chinese)
（2）Zhongfa Ma, Peng Zhang, Yong Wu, Weihua Li, Yiqi Zhuang, Lei Du, Jun Linbao, Accurate extraction of trap depth responsible for RTS noise, Chinese Physics B Vol.19 No.3 2010.
(3)Zhongfa Ma, Peng Zhang, Yong Wu, Weihua Li, Yiqi Zhuang, Lei Du, Jun Linbao,The influence of Coulomb-blockade effect on Repulsive RTS noise in nano-MOSFETs, Semicondicutor seicence and technology Vol.25 No.5, 2010。
(4)Zhongfa Ma, Peng Zhang, Yong Wu, Weihua Li, Yiqi Zhuang, Lei Du, Jun Linbao,A percolation study of RTS noise amplitudes in nano-MOSFETs by Monte Carlo simulation, Microelectronics Reliability Vol.50 Iss.1, 2010.
(5)Zhang, Peng ; Zhuang, Yi Qi ; Ma, Zhong Fa ; Bao, Li ; Du, Lei ; Bao, Jun Lin. The impact of gate–image charge on RTS amplitudes in ultra-thin gate oxide n-MOSFETs，Semiconductor Science and Technology, Volume 23, Issue 12, pp. 125037 (2008).
(6)Ma Zhongfa, Zhuang Yiqi, Du Lei, Wei Shan, A percolation study of RTS noise in deep sub-micron MOSFET by MC simulation, Chinese Physics, Vol.14, No.4, 2005.
