Publications
Publications for last 5 years
- Junction characteristics of wide – emitter( p)CdS-(n)Si-(p)Si Heterojunction transistor ,Iraqi Journal of Applied Physics ,Vol2 ,No.1&2 ,2006, P.3.
- Ge/Si Heterojunction Photodetector for 1.064μm Laser Pulses, Journal of material science :Material in Electronics , USA, V0l.17, 2006,P. 643.
- Optoelectronic properties n-CdS:In/p-Si heterojunction photodetector, Journal of material science :Material in Electronics , USA (Elsevier) ,Vol.17, 2006, P. 819.
Some Critical Issues on Structural and Photovoltaic Properties of Ge/Si Heterojunction , Material Letter ,UK(Elsevier) Vol.60, 2006 ,P.2352,.
-Fabrication and characterization of Bi2O3/Si heterojunction photodetector , Journal of Semiconductor Technology and Science , Korea ,Vol.6 , No.2 ,P.119,2006.
-Chracteristics of Bismuth trioxide film prepared by rapid thermal oxidation , e-Journal of Surface Science and Nanotechnology ,Japan , Vol.4 ,2006 , P.563.
-High Efficiency In2O3 /c-Si heterojunction solar cell produced by rapid thermal oxidation , Journal of Optoelectronic and Advanced Materials , Vol.8 , 2006 , P.1443.
- Preparation and characteristics study of ZnO: (Al,Cu,I) thin films by spray pyrolysis , e-Journal of Surface Science and Nanotechnology ,Japan ,Vol.4 , 2006 , P.636.
-Transparent and conducting ZnO films prepared by reactive pulsed laser deposition , Journal of Material Science: Material in Electronic (USA) Vol.18 ,2007, P 397.
Optoelectronic Properties of CdTe/Si Heterojunction prepared by pulsed Nd:YAG- laser deposition technique" Materials Science in semiconductor Processing (UK)Vol.10 ,2007 , P19
- Construction of Anisotype CdS/Si heterojunction lineup using I-V and C-V measurements , Modern Physics letter (USA) , Vol.28 , 2006 , p.1833.
- A new route for fabricating CdO/c-Si heterojunction solar cells ,Solar energy material and solar cells , Vol.91 ,2007, P 903.
100 - Optoelectronic Characteristics of NMOS Silicon photodetector made by Rapid Thermal Oxidation, Solid state electronics (Elsevier) , 51(2007)817.
- Pulsed laser deposition of Cd2SnO4 crystalline thin film ,Journal of surface science and nanotechnology (Japan) 5(2007)152.
- Spray pyrolysis deposition of α- Fe2O3 thin film, Jou.Surf.Sc.Nano.Tech(Japan) 6(2008)96.
- Dependence of photovoltaic properties of CdS/Si isotype heterojunction solar cells on deposition temperature , Optoelectronics and advanced materials – Rapid communications 2(2008) 232
- Studies on fabrication and characterization of high –performance Al-doped ZnO/Si(111) heterojunction photodetector , Semicond.Sci.Technol. 23(2008)075030
- Low resistance nonalloyed In ohmic contacts to n-Si irradiated by Nd:YAG laser pulses , Optoelectronics and advanced materials – Rapid communications 2(2008)818.
- Doping of CdTe film by rapid thermal diffusion , , J.College .Education , No.1, 2008, P.455
- Effect of rapid thermal annealing on thermally evaporated CdTe thin films , J.College .Education , No.1, 2008, P.465
- Effect of rapid thermal annealing on performance of large areacrystalline silicon position sensitive detector, Int. J. Nanoelectronics and Materials 2, 2 (2009) 197-204.
- Improved characteristics of sprayed CdO films by rapid thermal annealing , J Mater Sci: Mater Electron (2009) 20:1219–1224.
- Characteristics of P-Cu2O/n-Si heterojunction made by rapid thermal oxidation , J.Semiconductor Technology and Science, 9 , 1(2009) 51.
- Fabrication and Characterization of Photodetector based on Porous Silicon, e-J. Surf. Sci. Nanotech. Vol. 8 (2010) 388-391
- Preparation of nanocrystalline Cu2O thin film by pulsed laser deposition, Accepted for publication in J.Mater.Sci. : Materials in Electronics
