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Ryoichi Ishihara

Faculty of Electrical Engineering, Mathematics and Computer Science
Delft University of Technology


Key publications
T. Chen, R. Ishihara, and K. Beenakker; "Location- and Orientation-Controlled (100) and (110) Single-Grain Si TFTs Without Seed Substrate", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 9, pp 2348-2352 (2010) http://dx.doi.org/10.1109/TED.2010.2055510

R. Ishihara, et al.,“Single-Grain Si TFTs and Circuits Fabricated Through Advanced Excimer-Laser Crystallization”, Solid State Electronics, Volume 52, (2008), 353-358 http://dx.doi.org/10.1016/j.sse.2007.10.055

R. Ishihara, et al.,"Advanced excimer-laser crystallization process for single-crystalline thin film transistors," Thin Solid Films, vol. 427, pp. 77-85, (2003) http://dx.doi.org/10.1016/S0040-6090(02)01250-6

R. Ishihara, et al.,: "Effects of Light Pulse-Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin-Films" Jpn. J. Appl. Phys., 34 (1995) 1759. http://dx.doi.org/10.1143/JJAP.34.1759
Grade: Member

Member since June 15, 2011
Contact Details
Address: Feldmannweg 17
Phone: +31-152788498
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