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Changzhi Shi

Department of Microelectronics
Harbin Institute of Technology

Publications

Shi, Changzhi; Liu, Xiaowei; Chuai, Rongyan. Piezoresistive Sensitivity, Linearity and Resistance Time Drift of Polysilicon Nanofilms with Different Deposition Temperatures. Sensors, 2009, 9(2): 1141-1166. (SCI)
Chang-Zhi Shi, Xiao-Wei Liu, Rong-Yan Chuai. Current-induced recrystallization of polycrystalline silicon nano thin films deposited at different temperatures and its influences on piezoresistive sensitivity and temperature coefficients. Sensors and Actuators A, 2010, 162: 284-290. (SCI, EI)
Chang-Zhi Shi, Xiao-Wei Liu, Rong-Yan Chuai. DC electrical trimming characteristics of polysilicon nanofilms with different doping concentrations. Proceedings of 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009: 686-689. (ISTP, EI)
Shi, Changzhi; Liu, Xiaowei; Chuai, Rongyan. Piezoresistive Linearity Analysis of Polysilicon Nanofilms Deposited at Different Temperatures Based on Interstitialvacancy Model. Proceedings of 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008: 799-802 (ISTP, EI)
Xiao-wei Liu, Chang-zhi Shi, Rong-yan Chuai. Influence of current-induced recrystallization on piezoresistive properties of polysilicon nanosized thin films deposited at different temperatures. Proceedings of the Eurosensors XXIII conference. 2009, 1: 605-608. (ISTP, EI)
Liu, Xiaowei ; Lu, Xuebin ; Chuai, Rongyan ; Shi, Changzhi, et al. Polysilicon nanofilm pressure sensor. Sensors and Actuators A, 2009, 154(1): 42-45. (SCI, EI)
Xiaowei Liu, Changzhi Shi, Rongyan Chuai. Chapter “Polycrystalline Silicon Piezoresistive Nano Thin Film Technology”, Book “Solid State Circuits Technologies”, Intechweb, Austria, ISBN 978-953-307-045-2.
Member
Grade: Member

Member since June 24, 2011
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