Publications
2011
1. Minzhi Dai, Guodong Wu, Yue Yang, Jin Huang, Li Li, Jun Gong, and Qing Wan*, “Modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors”, Applied Physics Letters. 98, 153501 (2011).
2. Jie Jiang, Jia Sun, Wei Dou, Bin Zhou, and Qing Wan*, “In-plane-gate indium-tin-oxide thin-film transistors self-assembled on paper substrates”, Applied Physics Letters. 98, 113507 (2011).
3. Mingzhi Dai, Guodong Wu, Yang Yue, Jie Jiang, Li Li, Qing Wan*, “Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature”, Applied Physics Letters. 98, 093506 (2011).
4. Huixuan Liu, Jia Sun, Jie Jiang, Qingxin Tang, and Qing Wan*, Ultralow-Voltage Transparent In2O3 Nanowire Electric-Double-Layer Transistors, IEEE Electron Device Letters, 32, 315-317 (2011).
5. Jie Jiang, Jia Sun, Bin Zhou, Aixia Lu, Qing Wan*, "Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors". IEEE Electron Device Letters. 32, 500-502 (2011).
6. Aixia Lu, Mingzhi Dai, Jia Sun, Jie Jiang, Qing Wan*, "Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates". IEEE Electron Device Letters. 32, 518-520 (2011).
7. Mingzhi Dai, Jie Jiang, Yang Yue, Guodong Wu, Qing Wan*, "Density-of-State and Trap Modeling of Low-Voltage Electric-Double-Layer TFTs", IEEE Electron Device Letters. 32, 512-514 (2011).
8. Jia Sun, Jie Jiang, Aixia Lu, Qing Wan*, Low-Voltage Transparent Indium-Zinc-Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors, IEEE Trans. Electron Devices. 58, 764-768 (2011).
9. Jie Jiang, Jia Sun, and Qing Wan*，Self-Assembled Ultralow-Voltage Flexible Transparent Thin-film Transistors Gated by SiO2-based Solid-Electrolyte, IEEE Trans. Electron Devices. 58, 547-552 (2011).
10. Jie Jiang, Minzhi Dai, Jia Sun, Bin Zhou, Aixia Lu, and Qing Wan*, "Electrostatic modification of oxide semiconductors by electric double layers of microporous SiO2-based solid electrolyte", Journal of Applied Physics Letters. 109, 054501 (2011).
2010
1. Jie Jiang, Jia Sun, Bin Zhou, Aixia Lu, and Qing Wan*, “Vertical low-voltage oxide transistors gated by microporous SiO2/LiCl composite solid electrolyte with enhanced electric-double-layer capacitance”, Applied Physics Letters. 97, 052104 (2010).
2. Aixia Lu, Jia Sun, Jie Jiang, and Qing Wan*, “Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics”, Applied Physics Letters.96, 043114 (2010).
3. H. Z. Zhang, L. Y. Liang, A. H. Chen, Z. M. Liu, Z. Yu, H. T. Cao*, and Qing. Wan*, “High-performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps”, Applied Physics Letters. 97, 122108 (2010).
4. Aixia Lu, Jia Sun, Jie Jiang, and Qing Wan*, “One shadow mask self-assembled ultralow voltage coplanar homojunction thin-film transistors”, IEEE Electron Device Letters. 31, 1137-1139 (2010).
5. Jie Jiang, Jia Sun, Bin Zhou, Aixia Lu, and Qing Wan*, “Vertical Oxide Homojunction TFTs of 0.8 V Gated by H3PO4-Treated SiO2 Nanogranular Dielectric, IEEE Electron Device Letters. 31, 1263-1265 (2010).
6. Jia Sun, Jie Jiang, Aixia Lu, Qing Wan*, “One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by SiO2-Based Solid-Electrolyte with Controllable Operation Modes”，IEEE Transactions on Electron Devices. 57, 2258-2263 (2010).
7. Jia Sun, Huixuan Liu, Jie Jiang, Aixia Lu, and Qing Wan*, “Low-voltage transparent SnO2 nanowire transistors gated by microporous SiO2 solid-electrolyte with improved polarization response”, Journal of Material Chemistry, 20, 8010-8015 (2010).
8. Huixuan Liu, Jia Sun, Qingxin Tang, and Qing Wan*, “Ultralow-Voltage Electric Double-Layer SnO2 Nanowire Transistors Gated by Microporous SiO2-Based Solid Electrolyte”, The Journal of Physical Chemistry C. 114, 12316-12319 (2010).
9. Jia Sun, Jie Jiang, Aixia Lu, and Qing Wan*, “Microporous SiO2-based solid-electrolyte with improved polarization response for 0.8-volt transparent thin-film transistors”, Journal of Physics D: Applied Physics, 43, 295103-295106 (2010).
10. Wei Dou, Jia Sun, Jie Jiang, Aixia Lu, and Qing Wan*, “Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes”. Japanese Journal of Applied Physics. 49, 110201-110203 (2010).
2009-2006
1. Aixia Lu, Jia Sun, Jie Jiang, and Qing Wan*, “Microporous SiO2 with huge electric-double-layer capacitance for low-voltage indium tin oxide thin-film transistors”, Applied Physics Letters.95, 222905 (2009).
2. Jia Sun, Qing Wan* Aixia Lu, and Jie Jiang, “Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature”, Applied Physics Letters.95, 222108 (2009).
3. Jie Jiang, Qing Wan*, Jia Sun, and Aixia Lu, “Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature”, Applied Physics Letters.95, 152114 (2009).
4. Jing Huang, Qing Wan*, “Gas Sensors Based on Semiconducting Metal Oxide One-Dimensional Nanostructuressensors”, Sensors, Review, 9, 9903 (2009).
5. Jia Sun, Aixia Lu, Liping Wang, Yu Hu and Qing Wan*, “High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature”, Nanotechnology, 20, 335204 (2009).
6. Jia Sun, Qingxin Tang, Aixia Lu, Xuejiang Jiang, Qing Wan*, “Individual SnO2 nanowire transistors fabricated by the gold microwire mask method”, Nanotechnology. 20, 255202 (2009).
7. Qing, Wan*, Jin Huang, Aixia, Lu, Jia Sun, “Degenerately Mo-doped In2O3 nanowire arrays on In2O3 nanowire arrays on In2O3 microwires with metallic behaviors”, Journal of Applied Physics 106, 024312 (2009).
8. Xuejiao Jiang, Qing Wan*, Liangliang Zhang, and Taihong Wang, “High surface enhanced Raman scattering activity from Au-decorated individual and branched tin oxide nanowires”. Journal of Applied Physics 106, 104316 (2009).
9. Y. Hu, A. X. Lu, L. P. Wang, H.C. Yu, Q. Wan*, “Low-voltage ZnO thin-film transistors operating at 2.0 V gated with mesoporous SiO2 dielectric processed at room-temperature”, Physica E. 42, 152 (2009).
10. Qingxin Tang, Yanhong Tong, Wenping Hu, Qing Wan, Thomas Bjørnholm, “Assembly of Nanoscale Organic Single-Crystal Cross-Wire Circuits”, Advanced Materials. 21, 4234 (2009).
11. K. M. Li, L. L. Wang, W. Q. Huang, B. S. Zou, and Q. Wan, “Acoustic phonon transport in a four-channel quantum structure“, Journal of Applied Physics 105, 104515 (2009).
12. J. Q. Liu, M. D. He, X. Zhai, L. L. Wang, S, C. Wen, L. Chen, Q. Wan, B. S. Zou, and J. Q. Yao, “Tailoring optical transmission via the arrangement of compound subwavelength hole arrays” Optics Express, 17, 1895 (2009).
13. Y. Ren, K. Q. Chen, Q. Wan, B. S. Zou Y. Zhang, “Transitions between semiconductor and metal induced by mixed deformation in carbon nanotube devices”. Applied Physics Letters. 94, 183506 (2009).
14. X. J. Zhang, M. Q. Long, K. Q. Chen, Z. Shuai, Q. Wan, B. S. Zou Y. Zhang, Applied Physics Letters. 94, 073503 (2009).
15. Qingxin Tang, Yanhong Tong, Titoo Jain, Tue Hassenkam, Qing Wan, Kasper Moth-Poulsen and Thomas Bjørnholm, "Self-assembled nanogaps for molecular electronics", Nanotechnology. 20, 245205 (2009).
16. Qing Wan, Jin Huang, Aixia Lu, and Taihong Wang, “Degenerate doping induced metallic behaviors in ZnO nanobelts”. Applied Physics Letters, 93, 103109 (2008).
17. Qing, Wan, Eric N. Dattoli, and Wei Lu, “Doping Dependent Electrical Characteristics of SnO2 Nanowires”, Small. 4, 451 (2008).
18. Qing. Wan, Jin Huang, Zhong Xie, and Taihong Wang, Eric N. Dattoli, and Wei Lu, “Branched SnO2 nanowires on metallic nanowire backbones for ethanol sensors application”, Applied Physics Letters. 92,102101 (2008).（封面报道）
19. Z. Q. Fan, K. Q. Chen, Qing Wan, B. S. Zou, W. H. Duan, and Z. Shuai, “Theoretical investigation of the negative differential resistance in squashed C60 molecular device”, Applied Physics Letters. 92, 263304 (2008).
20. M. D. He, L. L. Wang, J. Q. Liu, X. Zhai, Q. Wan, X.S Chen, B. S. Zou, “Controllable light transmission through cascaded metal films perforated with periodic hole arrays”, Applied Physics Letters. 93, 221909 (2008).
21. N. Zhang, Ke Yu, Q. Li, Z. Q. Zhu, and Q. Wan, “Room-temperature high-sensitivity H2S gas sensor based on dendritic ZnO nanostructures with macroscale in appearance” J. Appl. Phys. 103, 104305 (2008).
22. Eric N. Dattoli, Qing Wan, Wei Guo, Yanbin Chen, Xiaoqing Pan, and Wei Lu. “Fully Transparent Thin-Film Transistor Devices Based on SnO2 Nanowires”, Nano Letters, 7, 2463 (2007).
23. J. Huang, A. X. Lu, B. Zhao, and Q. Wan* “Branched growth of degenerately Sb-doped SnO2 nanowires”，Applied Physics Letters, 91, 073102 (2007).
24. C. C. Li, Z. F. Du, L. M. Li, H. C. Yu, Q. Wan, and T. H. Wang, “Surface-depletion controlled gas sensing of ZnO nanorods grown at room temperature”, Applied Physics Letters. 91, 032101 (2007).
25. P. Feng, J. Y. Zhang, Q. Wan, T. H. Wang, “Photocurrent characteristics of individual ZnGa2O4 nanowires”, Journal of Applied Physics. 102, 074309 (2007).
26. Qing Wan, Eric N. Dattoli, Wei Lu. “Transparent metallic Sb-doped SnO2 nanowires” Applied Physics Letters, 90, 222107 (2007).
27. Qing Wan, Eric N. Dattoli, Wayne Y. Fung, Wei Guo, Yanbin Chen, Xiaoqing Pan, and Wei Lu. “High-Performance Transparent Conducting Oxide Nanowires”, Nano Letters, 6, 2909 (2006).
28. Q. Wan, M. Wei, D. Zhi, J. L. MacManus-Driscoll, and M. G. Blamire. “Epitaxial growth of vertically aligned and branched single crystalline tin-doped indium oxide nanowire arrays”, Advanced Materials, 18, 234 (2006).
29. Q. Wan, P. Feng, and T. H. Wang, “Vertically aligned tin-doped indium oxide nanowire arrays: Epitaxial growth and electron field emission properties” Applied Physics Letters, 89, 123102 (2006).
30. Q. Wan, “Structural and magnetic properties of manganese and phosphorus codoped ZnO films on (0001) sapphire substrates”，Applied Physics Letters, 89, 082515 (2006).
31. Q. Wan, “Comment on "Low resistivity p-ZnO films fabricated by sol-gel spin coating" [Appl. Phys. Lett. 88, 251116 (2006)]”, Applied Physics Letters, 89, 176103 (2006).
32. Q. Wan, T. H. Wang, “Comment on “A transparent metal: Nb-doped anatase TiO2”, Applied Physics Letters, 88, 226102 (2006).
33. P. Feng, Y. X. Xue, Y. G. Liu, Q. Wan, H. T. Wang, “Achieving fast oxygen response in individual beta-Ga2O3 nanowires by ultraviolet illumination”. Applied Physics Letters. 89, 112114 (2006)
34. K. Yu, Y. S. Zhang, F. Xu, Q. Li, Z. Q. Zhu, and Q. Wan, “Significant improvement of field emission by depositing zinc oxide nanostructures on screen-printed carbon nanotube films”. Applied Physics Letters, 88, 153123 (2006).
